1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes
Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
This product is available only outside of Japan.
!
!
!
!Applications
High-speed switching
!
!
!
!Features
1) Glass sealed envelope. (GSD)
2) High speed.
3) High reliability.
!
!
!
!Construction
Silicon epitaxial planar
!
!
!
!External dimensions
(Units : mm)
0.5
0.1
C
29
1
29
1
CATHODE BAND (BLACK)
3.8
0.2
A
1.8
0.2
Type No.
ROHM : GSD
EIAJ :
-
JEDEC : DO-35
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Type
1N4148
100
-
65
~
+
200
-
65
~
+
200
(V)
V
RM
75
(V)
V
R
450
(mA)
I
FM
150
(mA)
I
O
200
(mA)
I
F
2
(A)
1
s
I
FSM
500
(mW)
P
200
1N4150
50
-
65
~
+
200
-
65
~
+
200
50
600
200
250
4
500
200
1N4448
100
-
65
~
+
200
-
65
~
+
200
75
450
150
200
2
500
200
(
C)
Tj
(
C)
Topr
(
C)
Tstg
(1N914B)
!
!
!
!Electrical characteristics
(Ta = 25
C)
Type
0.1mA
1.0
0.66
0.62
0.74
0.76
0.86
0.82
0.92
1.0
0.87
1.0
0.54
0.62
0.72
@
0.25mA
@
1mA
@
2mA
@
5mA
@
10mA
@
20mA
@
30mA
@
50mA
@
100mA
@
200mA
@
250mA
@
5
A
75
100
50.0
20
4
4
0.025
5.0
20
75
-
50
0.1
50
100.0
50
2.5
4
-
100
50.0
20
4
4
@
100
A
@
@
150
C
V
R
(V)
@
25
C
V
R
(V)
t
rr
(ns)
C
r
(pF)
I
R
(
A) Max.
BV (V) Min.
V
F
(V)
I
F
=
10mA
f
=
1MHz
V
R
=
0
R
L
=
100
V
R
=
6V
1N4148
1N4150
1N4448
(IN914B)
0.025
5.0
20
75
The upper figure is the minimum V
F
and the lower figure is the maximum V
F
value.
1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes
!
!
!
!Electrical characteristic curves
(Ta = 25
C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2
0.5
1
2
5
10
20
50
100
FORWARD CURRENT : I
F
(
mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
0
20
40
60
80
100
120
3
10
30
100
300
1000
3000
REVERSE VOLTAGE : V
R
(V)
REVERSE CURRENT : I
R
(
nA)
Fig. 2 Reverse characteristics
70
C
50
C
100
C
Ta
=
25
C
0
0
10
20
30
0.5
1.0
1.5
2.0
2.5
3.0
5
15
25
f
=
1MHz
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristics
Fig. 4 Reverse recovery time
characteristics
0
0
10
20
30
1
2
3
V
R
=
6V
I
rr
=
1/10I
R
REVERSE RECOVERY TIME : t
rr
(
ns)
FORWARD CURRENT : I
F
(mA)
0.1
1
10
100
1000
10000
1
2
5
10
20
50
100
PULSE
Single pulse
PULSE WIDTH : Tw (ms)
SURGE CURRENT : I
surge (
A)
Fig. 5 Surge current characteristics
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
50
0.01
F
100ns
INPUT
D.U.T.
I
R
0.1I
R
t
rr
OUTPUT
0
5
Fig. 6 Reverse recovery time (t
rr
) measurement circuit
PDF 
ZIP